DocumentCode
2923583
Title
High Power Ridge GaInP/AIGaInP Laser Diodes for DVD-R/RW
Author
Byungjin Ma ; Cho, Soohaeng ; Kang, Joonseok ; Lee, Sangbum ; Lee, Changyun ; Shin, Youngchul ; Kim, Youngmin ; Park, YongJo
Author_Institution
Central R&D institute, Samsung Electro-Mechanics, Korea byungjin.ma@samsung.com
fYear
2005
fDate
30-02 Aug. 2005
Firstpage
863
Lastpage
864
Abstract
We demonstrate high power operation of 200 mW at 70°C of 660-nm GaInP/AlGaInP ridge laser diodes. Very narrow vertical beam divergence angle of 15.3° was achieved by employing a dry etching process and a two-step n-clad layer design.
Keywords
beam divergence angle; dry etching; high power; two-step n-clad layer; Diode lasers; Dry etching; Laser beams; Optical buffering; Optical devices; Optical recording; Optical refraction; Optical variables control; Plasma temperature; Wet etching; beam divergence angle; dry etching; high power; two-step n-clad layer;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN
0-7803-9242-6
Type
conf
DOI
10.1109/CLEOPR.2005.1569577
Filename
1569577
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