DocumentCode :
2923782
Title :
Photoluminescence up-conversion in five Inx(Al0.17Ga0.83)1-xAs/Al0.17Ga0.83As quantum wells with different x values
Author :
Machida, S. ; Tadakuma, T. ; Satake, A. ; Fujiwara, K. ; Folkenberg, J.R. ; Hvam, J.M.
Author_Institution :
Kyushu Institute of Technology, Japan, machida.satoru2@renesas.com
fYear :
2005
fDate :
30-02 Aug. 2005
Firstpage :
893
Lastpage :
894
Abstract :
Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence.
Keywords :
InAlGaAs; Nonlinear optical properties; Photoluminescence up-conversion; Quantum well; Energy states; Excitons; Gallium arsenide; Laser excitation; Photoluminescence; Power lasers; Radiative recombination; Resonance; Substrates; Wavelength measurement; InAlGaAs; Nonlinear optical properties; Photoluminescence up-conversion; Quantum well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
Type :
conf
DOI :
10.1109/CLEOPR.2005.1569591
Filename :
1569591
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2923782
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