Title :
Improvement in light-output efficiency of Near-Ultraviolet InGaN-GaN LEDs Fabricated on Stripe Patterned Sapphire Substrate
Author :
Lee, Y.J. ; Hsu, T.C. ; Kuo, H.C. ; Wang, S.C. ; Yang, Y.L. ; Yen, S.N. ; Chu, Y.T. ; Shen, Y.J. ; Hsieh, M.H. ; Jou, M.J. ; Lee, B.J.
Author_Institution :
Deparement of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan; R&D Division, Epistar Co., Ltd., Science-based Industrial Park, Hsinchu, Taiwan 300, Republic of China
Abstract :
The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20 % higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.
Keywords :
LEDs; near ultraviolet; patterned sapphire substrate (PSS); Aluminum gallium nitride; Epitaxial growth; Epitaxial layers; Gallium nitride; Light emitting diodes; Liquid crystal displays; Plasma temperature; Power generation; Substrates; Superlattices; LEDs; near ultraviolet; patterned sapphire substrate (PSS);
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Conference_Location :
Tokyo, Japan
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569596
