Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 /spl mu/m lasers on gallium arsenide

Summary form only given. Recent progress in wavelength tuning of InAs/InGaAs/GaAs self-assembled quantum dots (QDs) has shown that this system represents an adequate active material for 1.3 /spl mu/m lasers on gallium arsenide. Integration of 1.3 /spl mu/m QDs in a GaAs/AlGaAs vertical-cavity surface-emitting laser structure would allow the development of a low-cost laser module for 1.3 /spl mu/m fiber links. Embedding the QDs in a InGaAs quantum well (QW) has been proposed as an effective way to red-shift the emission wavelength to the 1.3 /spl mu/m region. In-plane lasers with low threshold current densities <100A/cm/sup 2/ were demonstrated using embedded QDs. We have investigated the carrier dynamics in embedded QDs by time-resolved photoluminescence (PL). The sample consists in a single layer of QDs formed by growing 2.6 monolayers of InAs at the center of a 20 nm In/sub 0.15/Ga/sub 0.85/As QW. The dot density is 10/sup 11/ cm/sup -2/. The room temperature (RT) PL signal is peaked at 1305 nm.