Title :
Research on broad-band high-gain klystrons of megawatt output power level
Author_Institution :
Inst. of Electron., Acad. Sinica, Beijing, China
Abstract :
The Department of High-Power Microwave Device in Institute of Electronics, Academia Sinica (IEAS) has developed broad-band klystrons for more than 30 years. In the recent 10 years, various models of high-power broad-band klystron have been studied and manufacturing covering L- and S-band. Typical electrical parameters of these tubes are 1 MW for peak power and 10% for relative bandwidth (-1dB). Most of them have used in military radar systems. In this paper, we give overall consideration of the design of such tubes
Keywords :
klystrons; 1 MW; L-band; S-band; broad-band high-gain klystron; design; high-power microwave tube; military radar system; Bandwidth; Circuit simulation; Coaxial components; Coupling circuits; Impedance; Klystrons; Power generation; RLC circuits; Radar; Resonance;
Conference_Titel :
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3619-4
DOI :
10.1109/ICMWFT.1996.574828
