Development of a spatially selective, high resolution quantum well intermixing (HRQWI) method based on low energy ion implantation

Summary form only given. In order to develop a high resolution quantum well intermixing process (HRQWI), using partially grown heterostructures, where the active region is situated at shallow depth, there is a list of requirements that have to be fulfilled : the bandgap increase has to be sufficiently high to obtain quantum confinement; the high quality optical characteristics of the material have to be conserved; the surface morphological quality of the material following HRQWI has to remain very high in order to allow the regrowth of upper cladding layers; and the spatial resolution of the process has to be on the order of 100 nm. The results presented here fulfil the first three requirements while allowing further work to be carried out in order to assess the fourth requirement.