The effect of Auger generated hot-holes on 1.5-/spl mu/m InGaAs(P)-based quantum well semiconductor lasers

Summary form only given.1.5-/spl mu/m semiconductor lasers are essential for optical telecommunications. Previously, we found that their high threshold currents, I/sub th/, and low T/sub o/-values are due to Auger recombination, amounting to 80% of T/sub o/ at room temperature. Now, using a combination of experimental and theoretical techniques we are able to specifically identify the direct-CHSH process, which produces hot-holes, as the most important Auger process in these devices. As a consequence, the position of the quantum wells (QWs) within the waveguide is shown to influence J/sub th/ where a lower J/sub th/ is measured for devices in which the QWs are grown towards the p-doped cladding layer. We believe this is largely due to the strong dependence of hot-hole leakage on QW position. These results clearly highlight the design implications of both QW placement and total waveguide thickness on laser performance.