Title :
An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system
Author :
Miyashita, M. ; Maemura, K. ; Yamamoto, K. ; Shimura, T. ; Nogami, M. ; Motoshima, K. ; Kitayama, T. ; Mitsui, Y.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
An ultra broadband GaAs MESFET preamplifier IC is developed for a 10 Gb/s optical communication system. High transimpedance of 44 dB Omega has been obtained for DC to 12 GHz. A receiver has been fabricated by using this preamplifier IC and a photodiode. The receiver operates with extremely low equivalent input noise current of 12.6 pA/ square root Hz for DC to 7.8 GHz. The authors describe the circuit design, the high frequency characteristics of the preamplifier IC, and the receiver.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; digital communication systems; field effect integrated circuits; gallium arsenide; optical receivers; preamplifiers; wideband amplifiers; 0 to 12 GHz; 10 Gbit/s; GaAs; MESFET preamplifier IC; high frequency characteristics; optical communication system; photodiode; receiver; ultra broadband; ultrawideband type; Gallium arsenide; Integrated circuit noise; MESFET integrated circuits; Optical fiber communication; Optical noise; Optical receivers; Photodiodes; Photonic integrated circuits; Preamplifiers; Ultraviolet sources;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.187914
