DocumentCode
29263
Title
Model of hot-carrier degradation for lateral IGBT device on SOI substrate
Author
Siyang Liu ; Weifeng Sun ; Chunwei Zhang ; Tingting Huang ; Qinsong Qian
Author_Institution
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Volume
49
Issue
7
fYear
2013
fDate
March 28 2013
Firstpage
497
Lastpage
499
Abstract
A novel model for hot-carrier degradation in a lateral insulated gate bipolar transistor (IGBT) device on SOI substrate (SOI-LIGBT) is presented. The setup of the model is based on the existing hot-carrier degradation mechanism in a SOI-LIGBT and assisted by a lateral DMOS device on SOI substrate (SOI-LDMOS) with completely the same structure except for the doping type in the drain area. The model parameters have been extracted by the degradation measurement results and the validity of the proposed model in a SOI-LIGBT has been also verified.
Keywords
MOS integrated circuits; hot carriers; insulated gate bipolar transistors; semiconductor doping; silicon-on-insulator; SOI substrate; SOI-LDMOS; SOI-LIGBT; doping type; hot-carrier degradation; insulated gate bipolar transistor; lateral DMOS device; lateral IGBT device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.4036
Filename
6504985
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