Title :
New approach to GaAs MESFET analog frequency dividers with low threshold input power and high conversion gain
Author :
Amine, H. ; Llopis, O. ; Gayral, M. ; Graffeuil, J. ; Sautereau, J.F.
Author_Institution :
LAAS-CNRS, Toulouse, France
Abstract :
A novel approach to frequency dividers based on the nonlinear feedback control of MESFET in forced oscillation mode is proposed. The input signal is used to control the FET gain, imposing oscillation conditions. This approach is first tested by time-domain simulation. An experimental MESFET analog frequency divider exhibits high gain conversion and low threshold input power values. The good agreement between simulated and experimental results confirms the proposed models and concept.<>
Keywords :
III-V semiconductors; feedback; frequency dividers; gallium arsenide; nonlinear network analysis; nonlinear network synthesis; solid-state microwave circuits; time-domain analysis; FET gain control; GaAs; MESFET; analog frequency dividers; forced oscillation mode; high conversion gain; low threshold input power; nonlinear feedback control; time-domain simulation; Circuits; Communication system control; FETs; Feedback control; Force control; Frequency conversion; Gallium arsenide; Intrusion detection; MESFETs; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.187968
