Session 5: Characterization, reliability, and yield BTI in SiON and high k FETs

This session focuses on the PBTI and NBTI in SiON/poly silicon, high k/metal and silicon nanowire FETs. The first two papers investigate NBTI in SiON/poly silicon gate stack transistors. The first paper examines the distribution profiles of pre-existing and stress induced traps in pFETs using flicker noise technique, whereas the second paper studies the effect of strain on interface trap generation. La doped hafnium based high k transistors are investigated using various techniques as reported in the third, fourth and fifth papers. The concluding paper investigates electron trapping and detrapping characteristics in silicon nanowire transistors.