A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs: process dependence of pre-existing and NBTI stress generated trap distribution profiles

Author

Kapila, G. ; Goyal, N. ; Maheta, V.D. ; Olsen, C. ; Ahmed, K. ; Mahapatra, S.

Author_Institution

Electr. Eng. Dept., IIT Bombay, Mumbai

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Flicker noise is studied in SiON p-MOSFETs before and after NBTI stress. Pre-stress noise magnitude and slope are correlated and used to verify N density distribution in gate dielectric. Post-stress noise magnitude and slope are used to explore distribution of trap generation during NBTI stress, and independently verified by using MFCP measurements. Consequence of N distribution (in SiON) on NBTI stress and recovery results is shown.

Keywords

MOSFET; dielectric materials; flicker noise; silicon compounds; MFCP measurements; NBTI stress; SiON; density distribution; flicker noise; gate dielectric; multifrequency charge pumping; negative bias temperature instability; plasma nitrided p-MOSFET; poststress noise; prestress noise; trap distribution profiles; 1f noise; Dielectrics; Energy measurement; Fluctuations; MOSFET circuits; Niobium compounds; Noise generators; Plasmas; Stress; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796625

Filename

4796625