Title :
1.3 micron high modal gain quantum dot lasers
Author :
Salhi, A. ; Todaro, M.T. ; Tasco, V. ; Martiradonna, L. ; Cingolani, R. ; Passaseo, A. ; De Vittorio, M.
Author_Institution :
Nat. Nanotechnol. Lab. of CNR-INFM, ISUFI c/o Distretto Tecnol. Univ. del Salento, Lecce
Abstract :
High saturation modal gain InAs/InGaAs quantum dot (QD) lasers operating at 1.3 micron have been successfully demonstrated, thus enabling high frequency operation, high temperature stability and ultra-small cavity lasers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum dot lasers; InAs-InGaAs; high frequency operation; high modal gain quantum dot lasers; high temperature stability; ultrasmall cavity lasers; wavelength 1.3 micron; Gallium arsenide; Indium gallium arsenide; Laser modes; Laser stability; Optical device fabrication; Plasma temperature; Pulsed laser deposition; Quantum dot lasers; Temperature distribution; Waveguide lasers;
Conference_Titel :
IEEE/LEOS Winter Topical Meeting Series, 2008
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1594-6
Electronic_ISBN :
978-1-4244-1595-3
DOI :
10.1109/LEOSWT.2008.4444383
