Title :
GaN-based natural super junction diodes with multi-channel structures
Author :
Ishida, Hidetoshi ; Shibata, Daisuke ; Matsuo, Hisayoshi ; Yanagihara, Manabu ; Uemoto, Yasuhiro ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi ; Ueda, Daisuke
Author_Institution :
Semicond. Device Res. Center, Panasonic Corp., Nagaokakyo
Abstract :
We propose a new breakdown mechanism of GaN-based electron devices called ldquonatural super junctionrdquo. The junction model is supported by device simulations and experiments for newly developed multi-channel diodes with a dual-recessed structure. Based on the model, the on-resistance of the diodes can be reduced keeping high breakdown voltages. The fabricated diode achieves extremely high breakdown voltage of 9300 V with low on-state resistance RonA of 176 mOmegacm2, which is the record low value for GaN-based SBDs with the breakdown voltage over 9000 V.
Keywords :
electric breakdown; gallium compounds; power semiconductor diodes; semiconductor device models; semiconductor junctions; GaN; breakdown mechanism; breakdown voltage; dual-recessed structure; multichannel diodes; natural superjunction diodes; voltage 9300 V; Electric breakdown; Electron devices; Gallium nitride; Polarization; Schottky diodes; Semiconductor device breakdown; Semiconductor devices; Semiconductor diodes; Silicon carbide; Voltage;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796636
