GaN-based natural super junction diodes with multi-channel structures

Author

Ishida, Hidetoshi ; Shibata, Daisuke ; Matsuo, Hisayoshi ; Yanagihara, Manabu ; Uemoto, Yasuhiro ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi ; Ueda, Daisuke

Author_Institution

Semicond. Device Res. Center, Panasonic Corp., Nagaokakyo

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We propose a new breakdown mechanism of GaN-based electron devices called ldquonatural super junctionrdquo. The junction model is supported by device simulations and experiments for newly developed multi-channel diodes with a dual-recessed structure. Based on the model, the on-resistance of the diodes can be reduced keeping high breakdown voltages. The fabricated diode achieves extremely high breakdown voltage of 9300 V with low on-state resistance RonA of 176 mOmegacm², which is the record low value for GaN-based SBDs with the breakdown voltage over 9000 V.

Keywords

electric breakdown; gallium compounds; power semiconductor diodes; semiconductor device models; semiconductor junctions; GaN; breakdown mechanism; breakdown voltage; dual-recessed structure; multichannel diodes; natural superjunction diodes; voltage 9300 V; Electric breakdown; Electron devices; Gallium nitride; Polarization; Schottky diodes; Semiconductor device breakdown; Semiconductor devices; Semiconductor diodes; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796636

Filename

4796636