DocumentCode
2928546
Title
A novel SPRAM (SPin-transfer torque RAM)-based reconfigurable logic block for 3D-stacked reconfigurable spin processor
Author
Sekikawa, M. ; Kiyoyama, K. ; Hasegawa, H. ; Miura, K. ; Fukushima, T. ; Ikeda, S. ; Tanaka, T. ; Ohno, H. ; Koyanagi, M.
Author_Institution
Dept. of Bioeng. & Robot., Tohoku Univ., Sendai
fYear
2008
fDate
15-17 Dec. 2008
Firstpage
1
Lastpage
3
Abstract
A novel reconfigurable logic block with SPRAM (spin-transfer torque RAM) is demonstrated. Magnetic elements of 50 times 200 nm2 in area and CMOS logic are fully integrated. Laboratory experimental results show that our reconfigurable logic block achieves 25 MHz read out operation with the magnetic resistance of 1.62 kOmega (parallel) and the MR ratio is 91.7 %.
Keywords
CMOS logic circuits; random-access storage; 3D-stacked reconfigurable spin processor; CMOS logic; frequency 25 MHz; reconfigurable logic block; spin-transfer torque RAM; CMOS logic circuits; Immune system; Integrated circuit interconnections; Laboratories; Logic devices; Magnetic field measurement; Power supplies; Random access memory; Reconfigurable logic; Torque;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location
San Francisco, CA
ISSN
8164-2284
Print_ISBN
978-1-4244-2377-4
Electronic_ISBN
8164-2284
Type
conf
DOI
10.1109/IEDM.2008.4796645
Filename
4796645
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