DocumentCode
2928563
Title
From NEMO1D and NEMO3D to OMEN: Moving towards atomistic 3-D quantum transport in nano-scale semiconductors
Author
Klimeck, Gerhard ; Luisier, Mathieu
Author_Institution
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN
fYear
2008
fDate
15-17 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant tunneling diode (RTD) to multi-million atom electronic structure modeling and the path for OMEN are laid out. The recent OMEN capabilities enable realistically large 3D atomistic nano-scale device simulation.
Keywords
band structure; nanoelectronics; quantum theory; resonant tunnelling diodes; semiconductor device models; 3D atomistic nano-scale device simulation; NEMO development; NEMO1D; NEMO3D; OMEN; multi-million atom electronic structure modeling; nanoelectronic modeling; resonant tunneling diode; Brillouin scattering; Indium gallium arsenide; Nanotechnology; Particle scattering; Phonons; Predictive models; Quantum computing; Quantum mechanics; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location
San Francisco, CA
ISSN
8164-2284
Print_ISBN
978-1-4244-2377-4
Electronic_ISBN
8164-2284
Type
conf
DOI
10.1109/IEDM.2008.4796647
Filename
4796647
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