Title :
One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching
Author :
Shanfield, S. ; Platzker, A. ; Aucoin, L. ; Kazior, T. ; Patel, B.I. ; Bertrand, A. ; Hoke, W. ; Lyman, P.
Author_Institution :
Raytheon, Lexington, MA, USA
Abstract :
The authors report 10- and 18-GHz power performance of double recessed 1.2-mm periphery pseudomorphic high electron mobility transistors (PsHEMTs). They have obtained demonstrably better uniformity in performance than conventionally fabricated PsHEMTs. This was accomplished by incorporating a new approach to recess formation using selective reactive ion etching of the first recess in a double recessed structure. The critical first recess was formed with exceptional uniformity using dry etching and an AlGaAs etch stop layer. Simultaneous power, gain, and power-added efficiency, representative of many devices, are summarized.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; sputter etching; 1 W; 10 GHz; 18 GHz; AlGaAs etch stop; GaAs-AlGaAs-InGaAs; double recessed structure; dry etching; dry first recess etching; first recess; gain; high electron mobility transistors; power; power performance; power-added efficiency; pseudomorphic HEMTs; recess formation; selective reactive ion etching; semiconductors; Dry etching; Electric variables; Gallium arsenide; HEMTs; MODFETs; Microwave amplifiers; PHEMTs; Plasma sheaths; Power generation; Wet etching;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188064
