Title :
High breakdown voltage, sub-micron, strained InGaAlAs/GaAs FET´s
Author :
Eisenbeiser, K.W. ; East, J.R. ; Haddad, G.I. ; Brock, T.
Author_Institution :
Center for High Frequency Microelectron., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Submicron gate GaAs FETs with a pseudomorphic surface layer of InGaAlAs used to increase breakdown voltage have been fabricated. A 0.2- mu m gate length device with f/sub max/ of 80 GHz had a saturation current of 360 mA/mm and a gate-to-drain breakdown of 11.5 V. The effect upon device performance of gate length, source-to-drain spacing and Al mole fraction was also investigated. The breakdown voltage showed only small changes with changes in gate length at submicron dimensions. The source-to-drain spacing changed not only the breakdown voltage but also appeared to change the mechanism that limits high-voltage performance.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; indium compounds; solid-state microwave devices; 0.2 micron; 11.5 V; 80 GHz; Al mole fraction; MESFET; breakdown voltage; gate length; gate-to-drain breakdown; high-voltage performance; performance; pseudomorphic surface layer; saturation current; semiconductors; source-to-drain spacing; strained layer FETs; submicron FETs; submicron dimensions; Aluminum alloys; Breakdown voltage; Etching; FETs; Gallium arsenide; Impact ionization; Lithography; Photonic band gap; Semiconductor materials; Testing;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188066
