A VDMOS transistor model taking into account the thermoelectrical interactions

Author

Lallement, C. ; Bouchakour, R. ; Maurel, T.

Author_Institution

Dept. d´´Electron., Telecom Paris, France

Volume

1

fYear

1994

fDate

30 May-2 Jun 1994

Firstpage

327

Abstract

One of the most important problems in the field of power electronics is heat dissipation. During the last ten years, different models of power MOSFET transistors (VDMOS transistors) have been developed but only a few of them take the temperature dynamically into account. A constant temperature for the model can distort the electrical behavior of the device. In this paper we propose an analytical one-dimensional thermoelectrical model for the VDMOS transistor, implemented in the SABER circuit simulator, in which the device´s temperature becomes an interactive variable during the simulation. This model is built on a combination of an electrical network with a thermal network. The accuracy of the model is appreciated with a complete characterization, and its capabilities are explored by a circuit example

Keywords

MOS integrated circuits; circuit analysis computing; cooling; insulated gate field effect transistors; power transistors; semiconductor device models; SABER circuit simulator; VDMOS transistor model; electrical behavior; electrical network; heat dissipation; interactive variable; power electronics; thermal network; thermoelectrical interactions; Analytical models; Capacitance; Circuit simulation; Heat sinks; Impedance; MOSFETs; Packaging; Semiconductor device measurement; Temperature; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on

Conference_Location

London

Print_ISBN

0-7803-1915-X

Type

conf

DOI

10.1109/ISCAS.1994.408821

Filename

408821