Optoelectronic devices for unbiased microwave switching

Author

Freeman, J.L. ; Ray, S. ; West, D.L. ; Thompson, A.G.

Author_Institution

Boeing High Technol. Center, Seattle, WA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

673

Abstract

The authors describe two simple microwave switches controlled by a weak optical beam. They are suitable for connecting microwave elements where electrical bias is not possible. Results from two devices are presented: a surface-depleted, gateless, optical FET; and a FET controlled by an integrated photovoltaic diode. Insertion losses of 3 dB and isolations of 20 dB were obtained up to 5.6 GHz with an optical power of 1 mW.<>

Keywords

field effect transistors; integrated optoelectronics; optoelectronic devices; photovoltaic cells; semiconductor switches; solid-state microwave devices; 1 mW; 20 dB; 3 dB; 5.6 GHz; connecting microwave elements; insertion loss; integrated photovoltaic diode; isolation; microwave switches; optical power; optoelectronic devices; photovoltaic diode controlled FET; surface depleted optical FET; unbiased microwave switching; weak optical beam; Integrated optics; Joining processes; Microwave FETs; Microwave devices; Optical beams; Optical control; Optical devices; Optical switches; Optoelectronic devices; Photovoltaic systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188073

Filename

188073