On-wafer measurement and modeling of millimeter-wave GaAs Schottky mixer diodes

Author

Allen, J.L. ; Chun-Yao Chen ; Klemer, D.P.

Author_Institution

Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

743

Abstract

Direct on-wafer U-band measurements of GaAs Schottky diodes have allowed for the development of bias-dependent nonlinear device models. The devices were low-parasitic capacitance planar diodes, fabricated on epitaxial (n-on-n/sup +/ GaAs) substrates prepared by metal-organic chemical vapor deposition. Schottky contacts with areas of 4 mu m/sup 2/ and 9 mu m/sup 2/ were formed using a Ti-Pt-Au metallization and a plated airbridge contact technique. Techniques evaluated for deembedding device measurements involved both numerical simulation as well as a novel on-chip calibration procedure.<>

Keywords

III-V semiconductors; Schottky-barrier diodes; gallium arsenide; gold; mixers (circuits); platinum; semiconductor device models; solid-state microwave devices; titanium; GaAs; MOCVD; Schottky mixer diodes; Ti-Pt-Au-GaAs; bias-dependent nonlinear device models; low-parasitic capacitance planar diodes; numerical simulation; on-chip calibration; on-wafer U-band measurements; plated airbridge contact technique; Capacitance; Chemical vapor deposition; Gallium arsenide; Metallization; Millimeter wave measurements; Millimeter wave technology; Schottky barriers; Schottky diodes; Semiconductor process modeling; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188092

Filename

188092