Oscillator and amplifier grids

Author

Rutledge, D. ; Hacker, J.B. ; Kim, M. ; Weikle, R.M., II ; Smith, R.P. ; Sovero, E.

Author_Institution

Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

815

Abstract

Presents the largest recorded output power for a quasi-optical power-combining array and a new planar heterojunction bipolar transistor (HBT) grid amplifier design. A 16-element MESFET grid oscillator has been fabricated that generated an effective radiated power of 28 W at 9.21 GHz. The total radiated power was estimated to be 2.0 W, giving a DC to RF efficiency of 28%. A new planar grid amplifier is also presented that is suitable for monolithic fabrication. The planar amplifier grid is a hybrid design using HBT transistors monolithically fabricated in a differential pair configuration and wire bonded to a Duroid substrate. The grid amplifier had a measured gain of 11 dB at 9.9 GHz.<>

Keywords

Schottky gate field effect transistors; heterojunction bipolar transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; microwave oscillators; 11 dB; 2.0 W; 28 W; 28 percent; 9.21 GHz; 9.9 GHz; DC to RF efficiency; Duroid substrate; MESFET grid oscillator; differential pair; effective radiated power; grid amplifier; hybrid design; output power; planar heterojunction bipolar transistor; quasi-optical power-combining array; total radiated power; Differential amplifiers; Fabrication; Heterojunction bipolar transistors; MESFETs; Mesh generation; Oscillators; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188112

Filename

188112