Approaching fermi level unpinning in Oxide-In0.2Ga0.8As

Author

Chiang, T.H. ; Lee, W.C. ; Lin, T.D. ; Lin, D. ; Shiu, K.H. ; Kwo, J. ; Wang, W.E. ; Tsai, W. ; Hong, M.

Author_Institution

Dept. Mat. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Electrical characteristics of oxide-In_0.2Ga_0.8As interface in ultra-high vacuum (UHV)-deposited Al₂O₃(3 nm)/Ga₂O₃ (Gd₂O₃) (8.5 nm) on n- and p-In_0.2Ga_0.8As/GaAs are studied. Capacitance-voltage (C-V) measurements under light illumination and under wide range of temperatures as well as corresponding conductance-voltage (G-V) measurements were carried out. Extremely high-quality interfaces with free-moving Fermi-level near the conductance and valence band-edges (regions close to E_c and E_v) are revealed for the Ga₂O₃(Gd₂O₃)/In_0.2Ga_0.8As system.

Keywords

Fermi level; III-V semiconductors; alumina; conduction bands; gallium arsenide; indium compounds; semiconductor-insulator boundaries; valence bands; Al₂O₃-Ga₂O₃-Gd₂O₃-In_0.2Ga_0.8As-GaAs; Fermi level; capacitance-voltage measurements; conductance-voltage measurements; free-moving Fermi-level; valence band-edges; Aluminum oxide; Capacitance measurement; Capacitance-voltage characteristics; Dielectric measurements; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Lighting; Passivation; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796698

Filename

4796698