Title :
Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET
Author :
Varghese, D. ; Xuan, Y. ; Wu, Y.Q. ; Shen, T. ; Ye, P.D. ; Alam, M.A.
Author_Institution :
Purdue Univ., West Lafayette, IN
Abstract :
Through a combination of measurement techniques, we study the interface properties of In0.65Ga0.35As transistor with ALD deposited Al2O3 gate dielectric. We show that the interface trap density at In0.65Ga0.35As/Al2O3 interface can be relatively high, but the transistor still exhibits inversion characteristics. A detailed profiling of the interface traps shows that majority of the interface traps are donor-like, and explains the absence of Fermi level pinning in spite of the high interface trap density.
Keywords :
Fermi level; III-V semiconductors; MOSFET; aluminium compounds; dielectric materials; dielectric thin films; gallium arsenide; indium compounds; interface states; ALD deposited gate dielectric; Fermi level; In0.65Ga0.35As-Al2O3; MOSFET; donor-like traps; interface trap density; inversion property; multiprobe interface characterization; Aluminum oxide; CMOS technology; Frequency; III-V semiconductor materials; Indium gallium arsenide; MOSFET circuits; Measurement techniques; Photonic band gap; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796699
