Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET

Author

Varghese, D. ; Xuan, Y. ; Wu, Y.Q. ; Shen, T. ; Ye, P.D. ; Alam, M.A.

Author_Institution

Purdue Univ., West Lafayette, IN

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Through a combination of measurement techniques, we study the interface properties of In_0.65Ga_0.35As transistor with ALD deposited Al₂O₃ gate dielectric. We show that the interface trap density at In_0.65Ga_0.35As/Al₂O₃ interface can be relatively high, but the transistor still exhibits inversion characteristics. A detailed profiling of the interface traps shows that majority of the interface traps are donor-like, and explains the absence of Fermi level pinning in spite of the high interface trap density.

Keywords

Fermi level; III-V semiconductors; MOSFET; aluminium compounds; dielectric materials; dielectric thin films; gallium arsenide; indium compounds; interface states; ALD deposited gate dielectric; Fermi level; In_0.65Ga_0.35As-Al₂O₃; MOSFET; donor-like traps; interface trap density; inversion property; multiprobe interface characterization; Aluminum oxide; CMOS technology; Frequency; III-V semiconductor materials; Indium gallium arsenide; MOSFET circuits; Measurement techniques; Photonic band gap; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796699

Filename

4796699