Title :
Overcoming the screening-induced performance limits of nanowire biosensors: A simulation study on the effect of electro-diffusion flow
Author :
Liu, Yang ; Lilja, Klas ; Heitzinger, Clemens ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., Stanford, CA
Abstract :
Device-level simulation capabilities have been developed to self-consistently model the Si-nanowire (NW) biosensor systems. Our numerical study demonstrates that by introducing electro-diffusion current flow in the electrolyte solutions, the electrostatic screening of the biological charge can be significantly suppressed; an improvement of the sensed signal strength by >ap10X is indicated. Based on such an operation principle, the screening-induced performance limits on Si-NW biosensors can be overcome.
Keywords :
biological techniques; biosensors; elemental semiconductors; nanowires; semiconductor device models; semiconductor quantum wires; silicon; Si; device-level simulation; electrodiffusion current flow; electrolyte solutions; electrostatic screening; nanowire biosensors; operation principle; screening-induced performance limits; Biological system modeling; Biosensors; Capacitance; Charge carrier processes; DNA; Electrodes; Electrostatics; Nanobioscience; Nanoscale devices; Poisson equations;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796733
