A monolithic V-band upconverter using 0.2 mu m InGaAs/GaAs pseudomorphic HEMT technology

Author

Wang, H. ; Nelson, B. ; Shaw, L. ; Kasody, R. ; Hwang, Y. ; Jones, W. ; Brunone, D. ; Sholly, M. ; Maguire, J. ; Best, T.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

1059

Abstract

The authors present the design and performance of a complete monolithic upconverter macrocell using 0.2- mu m InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) technology. Individual components, including a 2-10-GHz IF amplifier, a V-band upconverting mixer, and a V-band amplifier are also described. Both linear and nonlinear circuit simulations were performed during the design to predict the circuit performance. The measured results demonstrated a conversion gain of 10 dB at V-band by injecting the 2-10-GHz IF frequency with a local oscillator drive of 10 dBm at 54 GHz.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; gallium arsenide; indium compounds; intermediate-frequency amplifiers; microwave amplifiers; mixers (circuits); 0.2 micron; 10 dB; 2 to 10 GHz; 54 to 60 GHz; IF amplifier; InGaAs-GaAs; V-band amplifier; V-band upconverting mixer; conversion gain; linear circuit simulation; local oscillator drive; monolithic V-band upconverter; monolithic upconverter macrocell; nonlinear circuit simulations; pseudomorphic HEMT technology; Circuit simulation; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Macrocell networks; Nonlinear circuits; PHEMTs; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188173

Filename

188173