Non-thermal ablation of nitride ceramics with femtosecond Ti:sapphire laser

Author

Yabe, H. ; Hirayama, Y. ; Obara, M.

Author_Institution

Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan

fYear

2000

fDate

7-12 May 2000

Firstpage

616

Abstract

Summary form only given. The nitride ceramics such as aluminum nitride (AlN), boron nitride (BN), silicon nitride (SiN) have attractive thermal and electrical properties for the electronics industry. The AlN ceramic is a useful material to the electronics industry, due to its high thermal conductivity and high electrical resistance. Ultrafast laser pulses offer significant potential advantages over conventional nanosecond and microsecond laser sources for micromachining. The femtosecond laser ablation of nitride ceramics, especially AlN ceramic is studied with a Ti:sapphire laser. Furthermore, a comparative study with a nanosecond laser pulse is described.

Keywords

X-ray photoelectron spectra; aluminium compounds; boron compounds; ceramics; high-speed optical techniques; laser ablation; laser beam machining; micromachining; silicon compounds; 0.32 mJ; 1 kHz; 110 fs; 790 nm; Al/sub 2/O/sub 3/:Ti; AlN; AlN ceramic; BN; SiN; comparative study; electrical properties; electrical resistance; electronics industry; femtosecond Ti:sapphire laser; femtosecond laser ablation; micromachining; microsecond laser sources; nanosecond laser pulse; nanosecond laser sources; nitride ceramics; nonthermal ablation; thermal conductivity; thermal properties; ultrafast laser pulses; Aluminum nitride; Boron; Ceramics; Conducting materials; Electronics industry; Laser ablation; Optical pulses; Silicon compounds; Thermal conductivity; Ultrafast electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907466

Filename

907466