Title :
4 GHz miniaturized low noise dielectric resonator stabilized oscillator
Author_Institution :
Advantest Corp., Saitama, Japan
Abstract :
A 4-GHz miniaturized oscillator has been developed. It consists of a 17-GHz (17.84-GHz) DRO (dielectric resonator oscillator) and divide-by-four analog frequency divider. The 17-GHz DRO uses a HEMT (high-electron-mobility transistor) with series feedback. The frequency divider built was based on the concept of an injection locking oscillator using a bipolar transistor. The circuit provides an excellent phase noise of -120 dBc/Hz at 100-kHz offset from the carrier and a good temperature stability of +or-150 kHz over the temperature range of -20 degrees C to +80 degrees C. The circuit size is about 1/8 that of conventional 4.46-GHz DRO. The DRO and frequency divide combination provides advantages of small volume and ease of design.<>
Keywords :
frequency dividers; frequency stability; high electron mobility transistors; microwave oscillators; solid-state microwave circuits; -20 to 80 C; 17.84 GHz; 4 GHz; DRO; HEMT; SHF; bipolar transistor; circuit size; dielectric resonator oscillator; divide-by-four analog frequency divider; ease of design; high-electron-mobility transistor; injection locking oscillator; miniaturized oscillator; phase noise; series feedback; small volume; stabilized oscillator; temperature range; temperature stability; Bipolar transistors; Circuits; Dielectrics; Feedback; Frequency conversion; HEMTs; Injection-locked oscillators; MODFETs; Phase noise; Temperature distribution;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188242
