• DocumentCode
    293140
  • Title

    An accurate and matching-free threshold voltage extraction scheme for MOS transistors

  • Author

    Yu, Chong-Gun ; Geiger, Randall L.

  • Author_Institution
    Dept. of Electron. Eng., Inchon Univ., South Korea
  • Volume
    4
  • fYear
    1994
  • fDate
    30 May-2 Jun 1994
  • Firstpage
    115
  • Abstract
    An accurate threshold voltage extraction scheme for MOS transistors is presented. The scheme differs from alternative methods recently reported in the literature in that it does not require matched replica of the transistor under test and thus can be applied more effectively and accurately to real-time on-chip applications where threshold voltage measurements are required for many transistors with various geometries and bias conditions. The proposed scheme is accurately implemented in a matching-free way using a ratio-independent switched-capacitor subtracting amplifier and a dynamic current mirror. Nonideal effects associated with these circuits are investigated
  • Keywords
    MOS analogue integrated circuits; amplifiers; integrated circuit modelling; switched capacitor networks; MOS transistors; bias conditions; dynamic current mirror; nonideal effects; ratio-independent switched-capacitor subtracting amplifier; real-time on-chip applications; threshold voltage extraction scheme; transistor geometries; Circuit testing; Data mining; Degradation; Equations; Geometry; Linear regression; MOSFETs; Mirrors; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on
  • Conference_Location
    London
  • Print_ISBN
    0-7803-1915-X
  • Type

    conf

  • DOI
    10.1109/ISCAS.1994.409211
  • Filename
    409211