Title :
A 23 GHz monolithic MESFET DRO as self-oscillating mixer
Author_Institution :
Telefunken Systemtechnik, Ulm, Germany
Abstract :
A monolithic GaAs 23-GHz dielectric resonator oscillator (DRO) was investigated as a self-oscillating mixer (SOM) in Doppler-radar applications. A maximum conversion gain of 10 dB at low oscillator power level and small frequency off carrier was calculated and measured. The associated minimum detectable signal was determined to be between -130 dBm and -120 dBm. These results favor the application of MESFET SOMs as low-cost monolithically integrated Doppler sensors.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; microwave oscillators; mixers (circuits); radar equipment; 23 GHz; DRO; Doppler-radar applications; SOM; conversion gain; dielectric resonator oscillator; minimum detectable signal; monolithically integrated Doppler sensors; self-oscillating mixer; semiconductors; Dielectric measurements; Frequency conversion; Frequency measurement; Gain measurement; Gallium arsenide; MESFETs; Mixers; Oscillators; Power measurement; Signal detection;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188243
