DocumentCode :
2931572
Title :
A novel, rigorous approach to the dynamic, large-signal stability analysis of semiconductor devices and circuits under electro-thermal interaction
Author :
Cappelluti, F. ; Traversa, F.L. ; Bonani, F. ; Ghione, G.
Author_Institution :
Dipt. di Elettron., Politec. di Torino, Turin
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
The paper presents a rigorous numerical approach to study stability in semiconductor devices and circuits operating under large-signal time-periodic conditions, with application to the analysis of instabilities arising from electro-thermal interaction. The methodology is entirely based on the Harmonic Balance technique, with no time-domain calculations involved. As an example, the current gain collapse occurring in multifinger AlGaAs/GaAs HBTs is studied.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; dynamic large-signal stability analysis; electro-thermal interaction; harmonic balance technique; multifinger HBT; Analog circuits; Circuit stability; Flexible manufacturing systems; Frequency domain analysis; Heterojunction bipolar transistors; Limit-cycles; Pulse amplifiers; Radio frequency; Semiconductor devices; Stability analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796788
Filename :
4796788
Link To Document :
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