A novel, rigorous approach to the dynamic, large-signal stability analysis of semiconductor devices and circuits under electro-thermal interaction

The paper presents a rigorous numerical approach to study stability in semiconductor devices and circuits operating under large-signal time-periodic conditions, with application to the analysis of instabilities arising from electro-thermal interaction. The methodology is entirely based on the Harmonic Balance technique, with no time-domain calculations involved. As an example, the current gain collapse occurring in multifinger AlGaAs/GaAs HBTs is studied.