DocumentCode :
2931724
Title :
Discussion of damage induced by trigger pulse at different repetition frequencies in GaAs PCSS´s
Author :
Shan, Xiang ; Huiying, Dai
Author_Institution :
Dept. of Math. & Phys., Air Force Eng. Univ., Xi´´an, China
fYear :
2011
fDate :
23-27 Oct. 2011
Firstpage :
552
Lastpage :
554
Abstract :
The paper focuses on the light damage induced by nanosecond laser pulse with 1.06μm wavelength at high repetition frequencies in switch materials by comparing the resistivity values when the switch is on/off, discusses the damage mechanism. Experiment indicates that input laser with different repetition frequencies may cause different temperature rising speeds on the surface material, when the laser repetition frequency less than 1 kHz, the temperature accumulation effect in the material dose not perform significantly, and When the pulse laser is at high repetition frequency, the temperature rising rate in the laser irradiation area gets faster.
Keywords :
III-V semiconductors; gallium arsenide; laser beam effects; photoconducting switches; GaAs; PCSS; laser induced damage; laser irradiation area; nanosecond laser pulse; photoconductive semiconductor switch; trigger pulse; wavelength 1.06 mum; Gallium arsenide; Laser theory; Optical switches; Power lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electric Power Equipment - Switching Technology (ICEPE-ST), 2011 1st International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4577-1273-9
Type :
conf
DOI :
10.1109/ICEPE-ST.2011.6123051
Filename :
6123051
Link To Document :
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