AlInAs/GaInAs mHEMTs on silicon substrates grown By MOCVD

Author

Lau, Kei May ; Tang, Chak Wah ; Li, Haiou ; Zhong, Zhenyu

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Metamorphic Al_0.50In_0.50As/Ga_0.47In_0.53As high electron mobility transistors (mHEMT) grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates have been successfully demonstrated for the first time. The grown structures exhibited 2-DEG mobilities over 4500 cm²/V-s, with sheet carrier densities larger than 8 times 10¹² cm^-2 at room temperature. A 1.0-mum transistor exhibits a maximum transconductance of 587 mS/mm. The cut off and maximum oscillation frequencies were 32.3 and 44 GHz, respectively.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; carrier density; electron mobility; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor growth; two-dimensional electron gas; 2-DEG mobility; AlInAs-GaInAs; MOCVD; Si; carrier density; frequency 32.3 GHz; frequency 44 GHz; mHEMT; metalorganic chemical vapor deposition; metamorphic high electron mobility transistors; size 1.0 mum; temperature 293 K to 298 K; transconductance; Charge carrier density; Chemical vapor deposition; Frequency; HEMTs; MOCVD; MODFETs; Silicon; Temperature; Transconductance; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796797

Filename

4796797