SiGe HBT module with 2.5 ps gate delay

Author

Fox, A. ; Heinemann, B. ; Barth, R. ; Bolze, D. ; Drews, J. ; Haak, U. ; Knoll, D. ; Kuck, B. ; Kurps, R. ; Marschmeyer, S. ; Richter, H.H. ; Rücker, H. ; Schley, P. ; Schmidt, D. ; Tillack, B. ; Weidner, G. ; Wipf, C. ; Wolansky, D. ; Yamamoto, Y.

Author_Institution

IHP, Frankfurt (Oder)

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We present a double-polysilicon SiGe:C HBT module showing a CML ring oscillator (RO) gate delay tau of 2.5 ps, and f_T/ f_max/BV_CEo values of 300 GHz/350 GHz/1.85V. A key new feature of the HBT module is a connection of the extrinsic and intrinsic base regions by lateral epitaxial overgrowth. This facilitates simultaneously a very low base resistance and a reduced base-collector capacitance. In addition, the RF performance is enhanced for devices rotated by 45deg with respect to the standard orientation due to favorable epitaxial growth behavior.

Keywords

Ge-Si alloys; carbon; epitaxial growth; heterojunction bipolar transistors; isolation technology; SiGe:C; base-collector capacitance; frequency 300 GHz; frequency 350 GHz; gate delays; heterojunction bipolar transistors; lateral epitaxial overgrowth; shallow trench isolation; time 2.5 ps; voltage 1.85 V; Capacitance; Delay; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Ring oscillators; Silicon carbide; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796799

Filename

4796799