Title :
Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates
Author :
Persson, S. ; Fjer, M. ; Escobedo-Cousin, E. ; Malm, G. ; Wang, Y.-B. ; Hellström, P.E. ; Östling, M. ; Parker, E.H.C. ; Nash, L.J. ; Majhi, P. ; Olsen, S.H. ; Neill, A. G O
Author_Institution :
Newcastle Univ., Newcastle upon Tyne
Abstract :
Strained Si HBTs have been demonstrated for the first time with a maximum current gain (beta) of 3700 using a relaxed Si0.85Ge0.15 virtual substrate, Si0.7Ge0.3 base and strained Si emitter. This represents 10times and 27times larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs which were manufactured in parallel and had current gains of 334 and 135, respectively. The strained Si HBTs exhibited satisfactory breakdown voltage (2.5 V) compared with SiGe HBTs (2.7 V) and Si BJTs (4.5 V) and excellent control of collector off-state leakage (< 20 fA).
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor heterojunctions; substrates; Si emitter; SiGe; strained Si heterojunction bipolar transistors; virtual substrates; voltage 2.5 V; voltage 2.7 V; voltage 4.5 V; CMOS technology; Doping; Etching; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Silicon on insulator technology; Strain control; Substrates;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796800
