• DocumentCode
    2931933
  • Title

    Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

  • Author

    Ernst, T. ; Duraffourg, L. ; Dupré, C. ; Bernard, E. ; Andreucci, P. ; Bécu, S. ; Ollier, E. ; Hubert, A. ; Halté, C. ; Buckley, J. ; Thomas, O. ; Delapierre, G. ; Deleonibus, S. ; De Salvo, B. ; Robert, P. ; Faynot, O.

  • Author_Institution
    CEA/LETI, Minatec, Grenoble
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Both CMOS scaling and NEMS sensor devices scaling converge to the same type of sub 100 nm objects. This opens new fields of application for IC chips integrating both complex signal treatment and very highly sensitive sensing functionalities.
  • Keywords
    CMOS integrated circuits; MOSFET; VLSI; nanoelectromechanical devices; nanowires; silicon-on-insulator; 2D thin film; 3D CMOS nanowire matrices; 3D stacked gate-all-around nanowire channels; MOSFET scaling; SON; Si-based nanowire devices; VLSI; nano-electro-mechanical-systems; silicon-on-insulator; CMOS technology; Costs; Crystallization; Etching; Germanium silicon alloys; MOSFETs; Nanoscale devices; Silicon germanium; Silicon on insulator technology; Thin film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796804
  • Filename
    4796804
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2931933