Title :
Uniaxial strain effects on silicon nanowire pMOSFET and single-hole transistor at room temperature
Author :
Jeong, YeonJoo ; Chen, Jiezhi ; Saraya, Takuya ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo
Abstract :
In this paper, uniaxial stress effects on silicon nanowire pMOSFET (NW pFET) and single-hole transistor (SHT) are described. For the first time, it is found that stress technology is still effective as mobility booster even at extremely narrow NW pFET but the effects are gradually diminished as NW becomes narrower because effective mass modulation decreases. In case of SHT, oscillation current modulation, attributed to altered tunneling probability and energy level spacing by strain, is observed for the first time. In drift region of the SHT, strain effect of SHT approaches to the NW pFET case.
Keywords :
MOSFET; carrier mobility; energy states; nanowires; silicon; tunnelling; NW pFET; SHT strain effect; Si; energy level; mass modulation; mobility booster; oscillation current modulation; silicon nanowire pMOSFET; single-hole transistor; temperature 293 K to 298 K; tunneling probability; uniaxial stress effect; Capacitive sensors; Compressive stress; Effective mass; Fabrication; MOSFET circuits; Silicon; Temperature; Tensile strain; Tensile stress; Uniaxial strain;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796808
