DocumentCode
293225
Title
Development of a C∞-continuous small-signal model for a MOS transistor
Author
Iniguez, B. ; Moreno, Eugenio García
Author_Institution
Dept. of Phys., Balearic Islands Univ., Palma de Mallorica, Spain
Volume
5
fYear
1994
fDate
30 May-2 Jun 1994
Firstpage
193
Abstract
An explicit and single-piece model for MOSFET´s has been developed. The expressions for the dc current and total charges are C ∞-continuous through all regions of normal operation. The correctness and the advantages of the new model are checked by comparing with HSPICE simulations. Good agreement with the dc and charge models implemented in HSPICE has been found. Besides, the small-signal parameters show smoother transitions between the different regions. Therefore, the advantages of the new model for circuit simulation are demonstrated
Keywords
MOS integrated circuits; MOSFET; SPICE; circuit analysis computing; digital simulation; semiconductor device models; C∞-continuous small-signal model; HSPICE simulations; MOS transistor; circuit simulation; dc current; single-piece model; small-signal parameters; total charges; Capacitance; Charge carrier density; Circuit simulation; Convergence; Equations; MOSFET circuits; Physics; SPICE; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on
Conference_Location
London
Print_ISBN
0-7803-1915-X
Type
conf
DOI
10.1109/ISCAS.1994.409337
Filename
409337
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