Title :
High-speed 1.5-μm asymmetric Fabry-Perot modulators
Author :
Yoo, S.J.B. ; Gamelin, J. ; Bhat, R. ; Caneau, C. ; Koza, M.A. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. In conclusion, we have demonstrated 1.5 μm InP-InGaAsP asymmetric Fabry-Perot modulators with bandwidths exceeding 20 GHz. The low insertion loss, high extinction ratio, and a large modulation bandwidth of the modulator imply a potential for widespread applications in future high-speed optical communication systems.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; optical communication equipment; optical fibre losses; μm asymmetric Fabry-Perot modulators; 1.5 mum; 20 GHz; InP-InGaAsP; InP-InGaAsP asymmetric Fabry-Perot modulators; electro optical modulators; high extinction ratio; high-speed optical communication systems; large modulation bandwidth; low insertion loss; Bandwidth; Chirp modulation; Extinction ratio; Fabry-Perot; High speed optical techniques; Indium phosphide; Optical modulation; Reflectivity; Signal analysis; Voltage;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.907593
