Title :
Stackable memory of 3D chip integration for mobile applications
Author :
Gu, S.Q. ; Marchal, P. ; Facchini, M. ; Wang, F. ; Suh, M. ; Lisk, D. ; Nowak, M.
Author_Institution :
Adv. Technol. Integration, Qualcomm Inc., San Diego, CA
Abstract :
Stacking memory with 3D chip integration technology could provide the much needed bandwidth and memory density for mobile applications at low power. The contribution of this paper is to review the desired attributes of a stackable memory from system aspects and discuss its implementation challenges.
Keywords :
DRAM chips; mobile handsets; 3D chip integration; eDRAM chips; memory density; stackable memory; Bandwidth; Costs; Logic devices; Nonvolatile memory; Packaging; Power generation economics; Random access memory; Read-write memory; Stacking; Through-silicon vias;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796821
