• DocumentCode
    2932282
  • Title

    Stackable memory of 3D chip integration for mobile applications

  • Author

    Gu, S.Q. ; Marchal, P. ; Facchini, M. ; Wang, F. ; Suh, M. ; Lisk, D. ; Nowak, M.

  • Author_Institution
    Adv. Technol. Integration, Qualcomm Inc., San Diego, CA
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Stacking memory with 3D chip integration technology could provide the much needed bandwidth and memory density for mobile applications at low power. The contribution of this paper is to review the desired attributes of a stackable memory from system aspects and discuss its implementation challenges.
  • Keywords
    DRAM chips; mobile handsets; 3D chip integration; eDRAM chips; memory density; stackable memory; Bandwidth; Costs; Logic devices; Nonvolatile memory; Packaging; Power generation economics; Random access memory; Read-write memory; Stacking; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796821
  • Filename
    4796821
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2932282