Title :
L-band phase shifter with switching FET´s for phased array antenna
Author :
Kato, T. ; Tanaka, Y. ; Ueda, H. ; Kano, H. ; Hashimoto, M.
Author_Institution :
Toyota Central R&D Labs. Inc., Aichi, Japan
Abstract :
An L-band 3-b phase shifter was developed with switching GaAs MESFETs. To get a simple and low-loss phase shifter, the switching performance of the FET is improved. The FET has an on-state resistance of 1.5 Omega as a result of optimizing device structures. Using a phase shift circuit consisting of the FET and a short stub causes the phase shifter insertion loss to become 1.7+or-0.2 dB over the range of 1540-1660 MHz. A phased array antenna was also developed with the phase shifter.<>
Keywords :
Schottky gate field effect transistors; antenna accessories; antenna phased arrays; microwave antenna arrays; phase shifters; solid-state microwave circuits; 1540 to 1660 MHz; GaAs; L-band; UHF; insertion loss; low-loss; phase shifter; phased array antenna; switching GaAs MESFETs; Antenna arrays; FETs; Gallium arsenide; Insertion loss; L-band; MESFETs; Optical reflection; Phase shifters; Phased arrays; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188305
