Effect of the transistor mismatches on the performance of fully-differential OTAs

Author

Silva-Martínez, José ó

Author_Institution

Dept. of Integrated Circuits Design, Inst. Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico

Volume

5

fYear

1994

fDate

30 May-2 Jun 1994

Firstpage

253

Abstract

This paper deals with the effect of the transistor mismatches on the performance of Fully Differential Operational Transconductance Amplifiers (FDOTA). A simple macro model including transistor mismatches is proposed. From this model, the four transfer functions that determine the behavior of the FDOTA can be easily obtained. These transfer functions are further discussed and some clues in the design of high-performance FDOTAs are provided. Experimental results for a 6 μA/V FDOTA fabricated in a 1.2 μm CMOS process are in good agreement with the theoretical and simulated ones

Keywords

CMOS analogue integrated circuits; differential amplifiers; operational amplifiers; transfer functions; 1.2 micron; CMOS process; FDOTAs; Fully Differential Operational Transconductance Amplifiers; macro model; transfer functions; transistor mismatches; CMOS process; Circuit topology; Detectors; Integrated circuit synthesis; Integrated optics; Optical distortion; Transconductance; Transducers; Transfer functions; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on

Conference_Location

London

Print_ISBN

0-7803-1915-X

Type

conf

DOI

10.1109/ISCAS.1994.409353

Filename

409353