10 nm bulk-planar SONOS-type memory with double tunnel junction and sub-10 nm scaling utilizing source to drain direct tunnel sub-threshold

10 nm gate length bulk-planar SONOS-type memory device, where 1.1 nm Si nanocrystals are lying between double tunnel oxides, retains 2.6 decades memory window for 10 years in less than 13 V w/e voltages. Moreover, 8 nm gate-length double junction SONOS device can show the same reliable characteristics by realizing S/D direct tunnel sub-threshold. This shows that further device scaling and improvement are possible utilizing S/D direct tunnel sub-threshold. Double junction SONOS is a promising candidate for sub-10 nm region.