Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

Author

Komori, Yosuke ; Kido, Masaru ; Kito, Masaru ; Katsumata, Ryota ; Fukuzumi, Yoshiaki ; Tanaka, Hiroyasu ; Nagata, Yuzo ; Ishiduki, Megumi ; Aochi, Hideaki ; Nitayama, Akihiro

Author_Institution

Center for Semicond. R&D, Toshiba Corp., Yokohama

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory.

Keywords

NAND circuits; flash memories; silicon compounds; BiCS flash memory; NAND-string operation; SiN; bit-cost scalable structure; memory film stack; program-erase operation; ultra high density storage device; Costs; Electronic mail; FETs; Flash memory; Information systems; Semiconductor films; Silicon compounds; Stress control; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796831

Filename

4796831