DocumentCode :
2932997
Title :
Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
Author :
Mangin, S. ; Ravelosona, D. ; Katine, J.A. ; Fullerton, E.E.
Author_Institution :
Hitachi Global Storage Technol., San Jose
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
5
Lastpage :
5
Abstract :
In the present article, we describe our experiment demonstration of magnetic reversal and domain wall motion in driven by spin-currents in devices and wires with both the reference and free layer possessing perpendicular magnetic anisotropy.Two types of multilayer structures were designed such that the magnetic layers had perpendicular anisotropy. These were (bottom lead/ [Co/Pt]/[Co/Ni]/Cu/[Co/Ni]/ top lead) and (bottom lead/ [Co/Pt] Cu/[Co/Pt]/ top lead) sample structures. For the Co/Ni structure, the reference layer is a composite Co/Pt and Co/Ni multilayer to enhance the anisotropy and the free layer is a Co/Ni multilayer. E-beam lithography was used to define nanopillars with different shape (circle, hexagon and square) and different size. (diameters ranging from 1600 nm to 50 nm).The minor hysteresis loop shows the reversal of only the free layer, which is offset by 650 Oe from the origin due to the average dipolar field from the lower layer that favors parallel alignment.
Keywords :
cobalt; electron beam lithography; magnetic domain walls; magnetic hysteresis; magnetic multilayers; magnetisation reversal; nanostructured materials; nickel; perpendicular magnetic anisotropy; platinum; Co-Ni; Co-Pt; E-beam lithography; current-induced magnetization reversal; dipolar field; domain wall motion; hysteresis loop; multilayer structures; nanopillars; perpendicular magnetic anisotropy; size 1600 nm to 50 nm; spin currents; Anisotropic magnetoresistance; Lithography; Magnetic devices; Magnetic domain walls; Magnetic domains; Magnetic multilayers; Magnetization reversal; Nonhomogeneous media; Shape; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.375414
Filename :
4261439
Link To Document :
بازگشت