Title :
On design of analogue multipliers using gallium arsenide MESFETs
Author :
Lecouls, R. ; Haigh, D.G. ; Radmore, P.M. ; Webster, D.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
30 May-2 Jun 1994
Abstract :
A previous method of synthesis for transconductor and multiplier-functions using Gallium Arsenide (GaAs) MESFETs modelled by a square-law drain current versus gate-source voltage-(Vgs) characteristic is extended to the case of a general power law device characteristic and applied to the multiplier case. Compensation for the effect of device output conductance, modelled as a Vds-to-V gs electrostatic feedback effect, is considered and results are shown by simulation examples
Keywords :
III-V semiconductors; MESFET circuits; analogue multipliers; gallium arsenide; GaAs; analogue multipliers; compensation; design; drain current gate-source voltage characteristic; electrostatic feedback; gallium arsenide MESFETs; output conductance; power law; simulation; synthesis; transconductor; Circuit synthesis; DH-HEMTs; Educational institutions; FETs; Gallium arsenide; MESFETs; Optical wavelength conversion; Power engineering and energy; Transconductance; Voltage;
Conference_Titel :
Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-1915-X
DOI :
10.1109/ISCAS.1994.409464
