DocumentCode
2933344
Title
Investigation of semiconductor nanostructures photovoltaic for next generation solar cells
Author
Rajagopalan, Harish ; Brockett, Timothy ; Rahmat-Samii, Yahya
Author_Institution
Dept. of Electr. Eng., Univ. of California, Los Angeles, Los Angeles, CA, USA
fYear
2011
fDate
3-8 July 2011
Firstpage
1089
Lastpage
1091
Abstract
The purpose of this paper is to investigate the electromagnetic performance of various potential semiconductor nanostructures photovoltaic for future solar cells. GaAs is used as the semiconductor for this particular study. Nanostructures such as nanocones, nanopillars, and nanoprisms are compared systematically for their reflection and absorbance properties. The presence of nanostructures reduces the optical reflection and increases absorption as compared to conventional flat cell geometries. Initial studies show that nanocones and nanoprisms have the very good electromagnetic performance in terms of reflection and absorption over the solar spectrum. It is also shown that the nanocone arrays have robust performance for different polarizations and angles of incidence making them an attractive solution for solar cell designs.
Keywords
III-V semiconductors; gallium arsenide; nanostructured materials; solar cells; GaAs; electromagnetic performance; flat cell geometry; nanocone arrays; next generation solar cells; semiconductor nanostructure photovoltaic; Absorption; Gallium arsenide; Geometry; Nanostructures; Optical reflection; Photovoltaic cells; nanocones; nanopillars; nanoprisms; photovoltaic; semiconductor; solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on
Conference_Location
Spokane, WA
ISSN
1522-3965
Print_ISBN
978-1-4244-9562-7
Type
conf
DOI
10.1109/APS.2011.5996470
Filename
5996470
Link To Document