• DocumentCode
    2933344
  • Title

    Investigation of semiconductor nanostructures photovoltaic for next generation solar cells

  • Author

    Rajagopalan, Harish ; Brockett, Timothy ; Rahmat-Samii, Yahya

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California, Los Angeles, Los Angeles, CA, USA
  • fYear
    2011
  • fDate
    3-8 July 2011
  • Firstpage
    1089
  • Lastpage
    1091
  • Abstract
    The purpose of this paper is to investigate the electromagnetic performance of various potential semiconductor nanostructures photovoltaic for future solar cells. GaAs is used as the semiconductor for this particular study. Nanostructures such as nanocones, nanopillars, and nanoprisms are compared systematically for their reflection and absorbance properties. The presence of nanostructures reduces the optical reflection and increases absorption as compared to conventional flat cell geometries. Initial studies show that nanocones and nanoprisms have the very good electromagnetic performance in terms of reflection and absorption over the solar spectrum. It is also shown that the nanocone arrays have robust performance for different polarizations and angles of incidence making them an attractive solution for solar cell designs.
  • Keywords
    III-V semiconductors; gallium arsenide; nanostructured materials; solar cells; GaAs; electromagnetic performance; flat cell geometry; nanocone arrays; next generation solar cells; semiconductor nanostructure photovoltaic; Absorption; Gallium arsenide; Geometry; Nanostructures; Optical reflection; Photovoltaic cells; nanocones; nanopillars; nanoprisms; photovoltaic; semiconductor; solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on
  • Conference_Location
    Spokane, WA
  • ISSN
    1522-3965
  • Print_ISBN
    978-1-4244-9562-7
  • Type

    conf

  • DOI
    10.1109/APS.2011.5996470
  • Filename
    5996470