Local and Global Magnetic properties of Zn1-xCoxO, ZnCo2O4 and Mn-doped GaAs thin films

Author

Iwamoto, W.A. ; Pagliuso, P.G. ; Urbano, R.R. ; Rettori, C. ; Samanta, K. ; Bhattacharya, P. ; Katiyar, R. ; Da Silva, J. ; Pereira, A. ; Medeiros, G.A. ; Oseroff, S.B.

Author_Institution

IFGW - Unicamp, Sao Paulo

fYear

2006

fDate

8-12 May 2006

Firstpage

141

Lastpage

141

Abstract

Magnetic susceptibility and electron spin resonance (ESR) in different classes of ferromagnetic thin films were reported. Amorphous and crystalline thin films of Mn-doped GaAs and GaN were studied for different Mn concentrations (0.5 -10%) and for hydrogenated films with the same Mn concentrations. The films have been deposited using pulsed laser deposition on c-axis (0001) oriented Al₂O₃ substrates.

Keywords

amorphous semiconductors; gallium arsenide; magnetic semiconductors; magnetic susceptibility; magnetic thin films; manganese; paramagnetic resonance; pulsed laser deposition; semiconductor thin films; zinc compounds; GaAsMn; ZnCoO; amorphous thin films; crystalline thin films; electron spin resonance; ferromagnetic thin films; hydrogenated films; magnetic susceptibility; pulsed laser deposition; Amorphous materials; Crystallization; Gallium arsenide; Gallium nitride; Magnetic films; Magnetic properties; Magnetic susceptibility; Paramagnetic resonance; Pulsed laser deposition; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.375641

Filename

4261575