Title :
Preparation and Characterization of Zn0.96Mn0.04O film on Si (100) with a high Tc.
Author :
Park, S. ; Kim, P. ; Lee, Y. ; Kim, T. ; Kang, J.
Author_Institution :
Hanyang Univ., Seoul
Abstract :
In this study, we report the preparation of a high-textured Zn0.96Mn0.04O1-delta film with a high TC where delta is the oxygen vacancy, by UHV reactive co-sputtering onto a natively oxidized Si (100) wafer, and the dependence of magnetism on the oxygen vacancy, controlled by the oxygen partial pressure (PO 2) during growth.
Keywords :
Curie temperature; II-VI semiconductors; manganese compounds; semiconductor thin films; semimagnetic semiconductors; sputter deposition; vacancies (crystal); zinc compounds; Si; UHV reactive co-sputtering; Zn0.96Mn0.04O; high temperature; high-textured film; materials preparation; oxygen partial pressure; oxygen vacancy; Magnetic field measurement; Magnetic films; Magnetic semiconductors; Physics; Rough surfaces; Semiconductor films; Superconducting magnets; Surface roughness; Temperature sensors; Zinc oxide;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375646
