DocumentCode
2935995
Title
The Incident Angle Effect of Al Adatom on the Growth Morphology of Al/Ni(001) System: Molecular Dynamics Simulation
Author
Lee, S. ; Chung, Y.
Author_Institution
Hanyang Univ., Seoul
fYear
2006
fDate
8-12 May 2006
Firstpage
167
Lastpage
167
Abstract
The deposition behavior of Al atoms on Ni(001) substrate for various adatom incident angle and incident energy is investigated in this study using molecular dynamics simulation to investigate the growth morphology and the quality of thin film in atomic level. Results show that the surface roughness is comparatively decreased irrespective of adatom incident angle at the incident energy of 6 eV.
Keywords
aluminium; atomic layer deposition; metallic thin films; molecular dynamics method; surface roughness; Al; Ni; adatom incident angle; adatom incident energy; atomic level; growth morphology; molecular dynamics simulation; surface roughness; thin film; Acceleration; Atomic layer deposition; Atomic measurements; Ceramics; Power engineering and energy; Rough surfaces; Sputtering; Substrates; Surface morphology; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.375667
Filename
4261601
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