Title :
The Incident Angle Effect of Al Adatom on the Growth Morphology of Al/Ni(001) System: Molecular Dynamics Simulation
Author :
Lee, S. ; Chung, Y.
Author_Institution :
Hanyang Univ., Seoul
Abstract :
The deposition behavior of Al atoms on Ni(001) substrate for various adatom incident angle and incident energy is investigated in this study using molecular dynamics simulation to investigate the growth morphology and the quality of thin film in atomic level. Results show that the surface roughness is comparatively decreased irrespective of adatom incident angle at the incident energy of 6 eV.
Keywords :
aluminium; atomic layer deposition; metallic thin films; molecular dynamics method; surface roughness; Al; Ni; adatom incident angle; adatom incident energy; atomic level; growth morphology; molecular dynamics simulation; surface roughness; thin film; Acceleration; Atomic layer deposition; Atomic measurements; Ceramics; Power engineering and energy; Rough surfaces; Sputtering; Substrates; Surface morphology; Surface roughness;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375667
